ИСТИНА

In researches devoted to interaction of multicharged ions with surface, primarily investigates processes related to charge exchange, secondary emission of various particles, induction of accelerating fields, particles scattering and sputtering, formation of tracks in the target by high energies heavy ions [1,2,3,4]. The paper presents an experimental study of the impurity depth distribution dependence on their charge state. Xenon ions with energy from 50 to 400 keV in various charge states (q=1-20) were implanted at silicon monocrystal. Implantation was carried out in random direction. Fluence varied from 5*1014 to 5*1015 ion/cm2. Single-charged ion implantation and RBS analysis were carried out at MSU HVEE implanter. Irradiation by multicharged ions was performed at FAMA, Vinča Institute of Nuclear Sciences. By means of Rutherford backscattering technique in combination with channeling impurity and crystal defects depth profiles were obtained. Experimental results were compared with models produced by TRIM and MARLOWE codes. It is shown that average projected ranges of multicharged ions have smaller values in comparison with single-charged ions. Also demonstrated differences between defects profiles in crystal structure. [1] A.Arnau et.al., Surface Science Reports 27 (1997), p.113-239 [2]Y.Chen et.al., Radiation Measurements 43 (2008), p.111-115 [3]F.J.Currell, The Physics of Multiply and Highly Charged Ions volume 2 Interaction with Matter (2003) [4]Lemell et.al., Radiation Physics and Chemistry 76 (2007), p.412-417