ИСТИНА

Today detection of optical infrared radiation and its transformation to electricity relate to application of thin-film structures based on amorphous germanium (a-Ge) and polymorphous germanium/silicon structures. One of the approaches to modify their properties is the pulsed laser annealing. As a result, nanocrystalline areas are formed in the thin films and effective light absorbance and charge transport are revealed themselves. The use of femtosecond laser pulses is more effective in comparison with nano- and picosecond duration due to better dissipation of the absorbed laser radiation by semiconductor surfaces during treatment.