ИСТИНА

Recently the physical model of interaction of neutral fluorine with porous silicone dioxide was developed. Currently, this model is improved to consider ethylene and benzene bridged groups in low-k films used to enforce the film skeleton. The developed model and software were applied to calculate sputtering coefficients of Si, O, C and H from modern low-k films under fluorine bombardment and to analyze profile changes of nano objects and etching of deep trenches. The authors expect the obtained results to be of help in the field of plasma processing for deep trench modeling in organic silicate glass films.