ИСТИНА

Channeling effect can modify implanted ions distribution and reduce defect formation during ion implantation. Impurity and defect distribution profiles have a significant sense at microelectronic devices. Thus, to control and predict ion and defect distributions it is important to understand a role of channeling in these processes. The depth distribution of implanted ions and defects dependence for implantations under various irradiation parameters: for channeling and random conditions was investigated in this study. Si (110) wafers were irradiated in channeling <110> and random direction by Xe, Fe and other heavy ions with various fluences and energies from 100 to 500 keV. By using Rutherford Backscattering Spectrometry (RBS) differences between channeling and random implantation were observed. 1.5 MeV He ions and scattered angle 160 degrees were used for RBS. The effect of bombarding energy and fluences on distribution profiles have been found under different implantation conditions. Experimental results will be compared with results of computer simulations by using SRIM, Crystal-TRIM and MARLOWE computer codes.