ИСТИНА

The origin of the hole and electron traps is studied for Li2MoO4 using the EPR and TSL techniques. It was shown that charge carriers are trapped by the regular complexes at low temperatures. A similar effect was observed in ZnMoO4. The co-existence of self-trapped electrons and holes prevents their migration to emission centers and results in a considerable decrease of luminescence intensity at low temperatures in ZnMoO4. However, a different temperature dependence is observed for Li2MoO4. In spite of the different influence of the self-trapping effect on the temperature dependence of luminescence intensity its value is comparable in both studied crystals at low temperatures (T < 10 K). The influence of charge carriers self-trapping on the scintillation process at low temperature is discussed.