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The idea about defect-induced ferromagnetic long-range order at RT in some semiconducting materials is not new, but still needs to be further proved. In the case of TiO2 doped by 3d transition atoms the most interesting situation within this thought is with doping by Vanadium. The amount of defects was measured by Positron Annihilation Spectroscopy (PAS). The correlation between the saturation magnetization of the TiO2:V samples (SQUID-measurements) and the total amount of defects was established.