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ИСТИНА ЦЭМИ РАН |
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A serious problem appeared under realisation of silicon on sapphire (SOS) technology. It was found that a strongly defect layer with a thickness about 100 nm was formed at silicon–sapphire interface due to lattice unconformity between the crystal lattice of Al2O3 and the Si crystal lattice. To overcome this problem a process called as solid phase epitaxial regrowth (SPER) was suggested. The obtained results are discussed in the report. The carried-out researches allowed to make a conclusion on mechanisms SPER and to define implantation conditions at which significant improvement of crystal structure of the silicon film is observed.