ИСТИНА

Abstract. This paper presents the results of high-performance atomistic model-ing of heating and the initial stage of evaporation of thin silicon dioxide films under the action of high-power laser radiation. Both dense isotropic films ob-tained by normal deposition and highly porous anisotropic silicon dioxide films obtained by deposition at a large angle to the substrate are investigated. The de-pendence of the initial stage of film evaporation on its structural properties is analyzed.