ИСТИНА

In such a regime, we successfully performed single-shot bulk microstructuring of silicon. Using third-harmonic and near-IR microscopy, and molecular dynamics, we demonstrated that there is a low-density region in the center of a micromodification, surrounded by a “ring” with higher density, that could be an evidence of its micro-void structure. The formation of created micromodification could be controlled in situ using third-harmonic generation microscopy. The numerical simulation indicates that single-shot damage becomes possible due to electrons heating in the conduction band up to 8 eV (mean thermal energy) and the subsequent generation of microplasma with an overcritical density of 8.5 × 10^21 cm^−3. These results promise to be the foundation of a new approach of deep three-dimensional single-shot bulk micromachining of silicon.