ИСТИНА

Last five years there is a great interest in creating the true several nanometers and angstrom scale electronic elements, which are the main components of the future mass production technology for ultrahigh-density electronic devices with atomic functional structure. This interest encourages the worldwide development of the corresponding theoretical and fabrication methods. Two inevitable effects with the same characteristic energy scale (0.1-1eV) determine the properties of such small devices: Coulomb electronic repulsion and spatial energy quantization effects. The most simple single-atom functional electronic device is a single-atom single-electron transistor (SASET), in which a somehow selected atom or a chain of such atoms are placed between the source, drain and control electrodes. In this device the selected single atom or several atoms play the role of active charge centers with discrete energy spectrum. In this work we present our latest achievements - a realization of a single-electron transistor with an island formed by a single arsenic dopant in silicon. This approach is based on the so-called ``silicon-on-insulator'' technology.