|
ИСТИНА |
Войти в систему Регистрация |
ИСТИНА ЦЭМИ РАН |
||
Molecular transistor is the basic element of nanoelectronicsдоклад на конференции
- Авторы: Kolesov V.V., Sapkov I.V., Soldatov E.S.
- Международная Конференция : XI international scientific and technical conference of «Cybernetics and the high technologies of the 21st Century», C&T*2010
- Даты проведения конференции: 2010
- Тип доклада: Устный
- Докладчик: Kolesov V.V.
- Место проведения: Voronezh, Russia, 12-14 may , Russia
-
Аннотация доклада:
Blank-chips for molecular transistor were created using sputtering technology with focused ion beam. Sputtering can be characterized as a process with high speed of production, great reproducibility, soft requirements for prior lithographic operations and pretty real possibilities to decrease a gap’s width. Optimal parameters for sputtering of metal electrodes were found, so it is possible to create a 30 nm gaps suitable for production of system with overhanging electrodes.
- Добавил в систему: Солдатов Евгений Сергеевич