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We have tested possibilities of focused ion beam microscope for molecular transistor nanoelectrodes implementation and showed that it’s using allow to decrease width of starting gaps in suspended electrodes technique to values of about 30 nm. It is facilitate farther improvement of processing and quality of a gap. It also allows simlification and shortening of the processing sequence. In situ production of different basic nanostructures was demonstrated. It can be particularly interesting for constructing and implementation of unique nanoelectronic systems.