![]() |
ИСТИНА |
Войти в систему Регистрация |
ИСТИНА ЦЭМИ РАН |
||
The technique of the creation of single-electron high temperature molecular transistor electrodes was developed. Such electrodes are appropriate to the creation of high temperature single electron transistor with an island of 2-3 nm size. Optimal parameters for thin and narrow metal nanowires were defined. Samples of nanowires that provide obtaining of sub-5 nm gaps between electrodes were made.