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ИСТИНА ЦЭМИ РАН |
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The results both the experimental study and computer simulation of HOPG basal plane sputtering under high-fluence 30 keV Ar+ irradiation at normal incidence in the temperature range from RT to 400°C are presented. It has been found that the developed at elevated tem-perature relief (see Figure 1) results to two-fold sputtering yield increase (Y = 2) in comparison to the sputtering of practically flat surface at the temperatures smaller than the texture transition temperature (150o С) [1]. The effects of surface relief on the sputtering yield were simulated using the computer code OKSANA [2]. The relief was modelled as nanosized a wave-like surface along two mutually perpendicular surface axes (3D relief). The relief aspect ratio (amplitude/period) was varied from 0 (no relief) to high values corresponding to a very rough surface. For all types of the surface barrier the dependence of the sputtering yield on the aspect ratio was found to be non-monotonic, which reflects the relevant behavior of the sputtering yield on the incidence angle. The simulation permits to estimate the ratio of the amplitude to the relief period which results in the experiment at RT to the minimal value of the sputtering yield (Y ≈ 1). The upper limit of this ratio has been found less than 0.4. References [1] N.N. Andrianova, A.M. Borisov, E.S. Mashkova, V.S. Sevostyanova, Yu.S. Virgiliev, Nucl. Instr. and Meth. in Phys. Res. B (2013) 315, 117-120. [2] V.I. Shulga, Nucl. Instr. and Meth. in Phys. Res. B (2013) 316, 76-80.