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ИСТИНА ЦЭМИ РАН |
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In this work authors present the results of the fabrication technology development and the experimental study of silicon nanowire field effect transistor (NW FET) as a potential sensor for application in biology and medicine. The original fabrication technology used silicon-on-insulator (SOI) material and did not involve Si doping and activation processes. Current-voltage characteristics of the experimental structures were measured in a bu®er solutions over a wide range (0 - 10 V) of the gate voltages. The possibility of using of the silicon NW FET as a sensitive field/charge sensor was demonstrated by pH measurements.