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Journal of Vacuum Science and Technology Aжурнал
Индексирование:
JCR (1 января 1970 г.-),
Scopus (1 января 1970 г.-)
Период активности журнала:
1 января 1983 г.-
- Другие названия журнала: Journal of Vacuum Science and Technology A
- Сайт журнала: https://pubs.aip.org/avs/jva
- Издательство: AIP Publishing
- Местоположение издательства: United States
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Аннотация:
In 1983, the two journals, Journal of Vacuum Science and Technology A and B were launched when the original Journal of Vacuum Science and Technology was split.
JVSTA is devoted to publishing reports of original research, letters, and review articles on interfaces and surfaces of materials, thin films, and plasmas. JVSTA publishes reports that advance the fundamental understanding of interfaces and surfaces at a fundamental level and that use this understanding to advance the state of the art in various technological applications. The scope includes, but is not limited to, the following topics:
- Applied and fundamental surface science
- Atomic layer deposition and atomic layer etching
- Electronic and photonic materials and their processing, including 2D materials
- Magnetic thin films and interfaces
- Materials and thin films for energy conversion and storage
- Photovoltaics, including thin film solar cells and organic and hybrid solar cells
- Plasma science and technology, including plasma-surface interactions, plasma diagnostics, plasma deposition and etching, and applications of plasmas to micro and nanoelectronics
- Surface coatings and engineering
- Thin film deposition, including physical and chemical vapor deposition and molecular beam epitaxy
- Thin film properties and characterization
- Transmission electron microscopy, including in situ methods
- Tribology
- ISSN: 0734-2101 (Print)
Статьи, опубликованные в журнале
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- 2023 Transport and trap states in proton irradiated ultra-thick k-Ga2O3
- Polyakov A.Y., Nikolaev V.I., Pechnikov A.I., Yakimov E.B., Lagov P.B., Shchemerov I.V., Vasilev A.A., Kochkova A.I., Chernykh A.V., Lee In-Hwan, Pearton S.J.
- в журнале Journal of Vacuum Science and Technology A, издательство AIP Publishing (United States), том 41, № 3, с. 032705-1-032705-6 DOI
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- 2021 Ion implantation in $\upbeta$-Ga2O3: Physics and technology
- Nikolskaya Alena, Okulich Evgenia, Korolev Dmitry, Stepanov Anton, Nikolichev Dmitry, Mikhaylov Alexey, Tetelbaum David, Almaev Aleksei, Bolzan Charles Airton, Buaczik Antônio, Giulian Raquel, Grande Pedro Luis, Kumar Ashok, Kumar Mahesh, Gogova Daniela
- в журнале Journal of Vacuum Science and Technology A, издательство AIP Publishing (United States), том 39, № 3, с. 030802 DOI
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- 2020 Effect of terminal methyl group concentration on critical properties and plasma resistance of organosilicate low-k dielectrics
- Rezvanov Askar A., Miakonkikh Andrey V., Seregin Dmitry S., Vishnevskiy Alexey S., Vorotilov Konstantin A., Rudenko Konstantin V., Baklanov Mikhail R.
- в журнале Journal of Vacuum Science and Technology A, издательство AIP Publishing (United States), том 38, № 3, с. 033005 DOI
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- 2020 Irradiation of nanoporous structures with light and heavy low-energy ions: Sputtering enhancement and pore sealing
- Sycheva A.A., Voronina E.N., Rakhimova T.V., Novikov L.S., Rakhimov A.T.
- в журнале Journal of Vacuum Science and Technology A, издательство AIP Publishing (United States), том 38, № 5, с. 1-14 DOI
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- 2019 Reaction mechanism of N atoms interaction with low-k organosilicate glass films: Dynamic DFT study
- Voronina E.N., Mankelevich Yu A., Rakhimova T.V., Lopaev D.V.
- в журнале Journal of Vacuum Science and Technology A, издательство AIP Publishing (United States), том 37, с. 061304 DOI
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- 2018 Argon clustering in silicon under low-energy irradiation: Molecular dynamics simulation with different Ar–Si potentials
- Sycheva A.A., Voronina E.N., Rakhimova T.V., Rakhimov A.T.
- в журнале Journal of Vacuum Science and Technology A, издательство AIP Publishing (United States), том 36, № 6, с. 1-11 DOI
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- 2018 Etching low-k films by F atoms: Inside view
- Palov A.P., Rakhimova T.V., Voronina E.N., Mankelevich Yu A.
- в журнале Journal of Vacuum Science and Technology A, издательство AIP Publishing (United States), том 36, № 2, с. 02C103 DOI
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- 2018 Sputtering of Si by Ar: A binary collision approach based on quantum-mechanical cross sections
- Palov A.P., Balint-Kurti G.G., Voronina E.N., Rakhimova T.V.
- в журнале Journal of Vacuum Science and Technology A, издательство AIP Publishing (United States), том 36, № 4, с. 041303 DOI
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- 2006 Selective water vapor cryopumping through argon
- Kryukov A.P., Podcherniaev O., Hall P.H., Plumley D.J., Levashov V.Yu, Shishkova I.N.
- в журнале Journal of Vacuum Science and Technology A, издательство AIP Publishing (United States), том 24, № 4, с. 1592-1596 DOI
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- 2003 Thermal plasma fabricated lithium niobate-tantalate films on sapphire substrates
- Kulinich S.A., Yoshida T., Yamamoto H., Terashima K.
- в журнале Journal of Vacuum Science and Technology A, издательство AIP Publishing (United States), том 21, № 4, с. 994-1003 DOI
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- 2002 Anomalous effective magnetoconductivity in disordered bipolar semiconductors: Theory and experimental simulation
- Chaikovsky Isaak, Alperovich Leonid, Gurvich Yuri, Melnikov Andrey, Biryukov Sergey
- в журнале Journal of Vacuum Science and Technology A, издательство AIP Publishing (United States), том 20, № 3, с. 1162-1166 DOI
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- 2000 SIMULATION AND CORRECTION OF GEOMETRIC DISTORTIONS IN SCANNING KELVIN PROBE MICROSCOPY
- Efimov A., Cohen S.R.
- в журнале Journal of Vacuum Science and Technology A, издательство AIP Publishing (United States), том 18, № 4 I, с. 1051-1055
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- 1994 Altered layer as sensitive initial chemical state indicator
- Dementjev A.P., Ivanova O.P., Vasilyev L.A., Naumkin A.V., Nemirovsky D.M., Shalaev D.Y.
- в журнале Journal of Vacuum Science and Technology A, издательство AIP Publishing (United States), том 12, № 2, с. 423-427
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- 1992 NUMERICAL-MODEL OF BOMBARDING IONS ENERGY-DISTRIBUTION FUNCTION IN MAGNETRON DISCHARGE
- LUKYANOVA AV, RAKHIMOV AT, SUETIN NV
- в журнале Journal of Vacuum Science and Technology A, издательство AIP Publishing (United States), том 10, № 4, Part 1, с. 1349-1351
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- 1992 THE THEORETICAL AND EXPERIMENTAL-STUDY OF LARGE APERTURE LOW-ENERGY E-BEAM SOURCE FOR SEMICONDUCTOR PROCESSING
- KOVALEV AS, MANKELEVICH YA, MURATOV EA, RAKHIMOV AT, SUETIN NV
- в журнале Journal of Vacuum Science and Technology A, издательство AIP Publishing (United States), том 10, № 4, с. 1086-1091 DOI
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- 1977 Formation of cones under sputtering
- Yurasova V.E.
- в журнале Journal of Vacuum Science and Technology A, издательство AIP Publishing (United States), том 14, с. 285-285