Redistribution of As during Platinum Silicide Formationстатья
Информация о цитировании статьи получена из
Web of Science
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 22 ноября 2015 г.
Аннотация:An investigation is made of As redistribution during PtSi formation by annealing at 400 °C in a vacuum of 10−4 Pa. It is found that As implanted initially in a Pt film migrates during the PtSi growth to the surface and remains in the silicide layer. As implanted initially in Si is pushed off partly into the depth of Si by the front of growing PtSi and enchanced diffusion of As atoms in Si takes place. A phenomenological approach taking in account 1. the rule of “electronegativity difference maximum”, and 2. the generation of point defects (Si vacancies) in silicide formation zone.