Induced non-metallicity during resistive switching in structures based on a topological insulator Bi2Se3статья
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Дата последнего поиска статьи во внешних источниках: 19 сентября 2015 г.
Аннотация:Bi2Se3/Ag, CuxBi2Se3/Ag heterojunctions have been obtained in which the bipolar resistive switching effect has been observed and studied for the first time. The carrier type was determined by the switching voltage polarity. During resistive switching the conductivity of the metastable “On” and “Off” states changes from metallic to non-metallic (activation).