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Efficient visible luminescence of nanocrystalline silicon prepared from amorphous silicon films by thermal annealing and stain etchingстатья
Статья опубликована в высокорейтинговом журнале
Информация о цитировании статьи получена из
Web of Science,
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
- Авторы: Timoshenko Victor Yur'evich, Gonchar Kirill Alexandrovich, Mirgorodskiy Ivan Victorovich, Maslova Natalia Evgen'evna, Nikulin Valery Eduardovich, Mussabek Gaukhar Kalizhanovna, Taurbaev Yerzhan Toktarovich, Svanbayev Eldos Abugalievich, Taurbaev Toktar Iskataevich
- Журнал: Nanoscale Research Letters
- Том: 6
- Номер: 349
- Год издания: 2011
- Издательство: Springer Verlag
- Местоположение издательства: Germany
- Первая страница: 1
- Последняя страница: 5
- DOI: 10.1186/1556-276X-6-349
- Аннотация: Films of nanocrystalline silicon (nc-Si) were prepared from hydrogenated amorphous silicon (a-Si: H) by using rapid thermal annealing. The formed nc-Si films were subjected to stain etching in hydrofluoric acid solutions in order to passivate surfaces of nc-Si. The optical reflectance spectroscopy revealed the nc-Si formation as well as the high optical quality of the formed films. The Raman scattering spectroscopy was used to estimate the mean size and volume fraction of nc-Si in the annealed films, which were about 4 to 8 nm and 44 to 90%, respectively, depending on the annealing regime. In contrast to as-deposited a-Si: H films, the nc-Si films after stain etching exhibited efficient photoluminescence in the spectral range of 600 to 950 nm at room temperature. The photoluminescence intensity and lifetimes of the stain etched nc-Si films were similar to those for conventional porous Si formed by electrochemical etching. The obtained results indicate new possibilities to prepare luminescent thin films for Si-based optoelectronics.
- Добавил в систему: Тимошенко Виктор Юрьевич