Resonance magneto-resistance in double barrier structure with spin-valveстатья
Информация о цитировании статьи получена из
Web of Science,
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
Аннотация:The conductance and tunnel magneto-resistance (TMR) of the double barrier magnetic tunnel junction with spin-valve sandwich (F/P/F) inserted between two insulating barrier, are theoretically investigated. It is shown, that resonant tunnelling, due to the quantum well states of the electron confined between two barriers, sharply depends on the mutual orientation of the magnetizations of ferromagnetic layers F. The calculated optimistic value of TMR exceeds 2000%. (C) 2004 Elsevier B.V. All rights reserved.