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Thickness dependent electronic structure of exfoliated mono- and few-layer 1T$\prime$-MoTe2статья
- Авторы: Pawlik A.S., Aswartham S., Morozov I., Knupfer M., Büchner B., Efremov D.V., Koitzsch A.
- Журнал: Physical Review Materials
- Том: 2
- Номер: 10
- Год издания: 2018
- Издательство: American Physical Society
- Местоположение издательства: United States
- DOI: 10.1103/physrevmaterials.2.104004
- Аннотация: Semimetallic MoTe2 has recently generated enormous attention due to its topological properties, large magnetoresistance, superconductivity, suitability for homojunction phase patterning, and, in particular, metalinsulator transition of thin layers, possibly indicating a quantum spin hall state. These observations prove the potential of MoTe2 for thin film applications and call for systematic investigations of the thickness dependent electronic structure. Here we apply angle-resolved photoemission spectroscopy supported by band structure calculations to elucidate the electronic structure of exfoliated 1T'-MoTe2. Electron and hole pockets of the inverted conduction and valence bands near Gamma are resolved down to the monolayer. The Fermi level of exfoliated 1T'-MoTe(2 )monolayers lays within the electron pockets indicating intrinsic n-type doping. E-F shifts downward with increasing thickness consistent with a surface driven mechanism. Our study provides insight on the electronic properties of semimetallic 1T'-MoTe(2 )as an indispensable ingredient for future thin film functionalization.
- Добавил в систему: Морозов Игорь Викторович