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Radiation-stimulated generation of thermostable electrically active defects in SiO2статья
Информация о цитировании статьи получена из
Scopus,
Web of Science
Дата последнего поиска статьи во внешних источниках: 20 января 2016 г.
- Авторы: Kozlov S.N., Shcheblykin Yu V., Kausumov Yu N.
- Журнал: Soviet Microelectronics
- Том: 17
- Номер: 6
- Год издания: 1989
- Первая страница: 314
- Последняя страница: 319
- Аннотация: Defect formation in a SiO2 layer under bombardment with low-energy electrons and soft x-ray beams was studied. The structures studied were silicon MIS transistors with an isolated gate. With the contacts grounded, the structures were bombarded with electrons and with x-rays with energies of 11.5 and 6.3 keV respectively. The metal-free surface was irradiated with ultraviolet light with an energy of 4.6 keV. At considerable electron doses the radiation defects formed are thermostable and are present in the oxide in an uncharged state, i.e., are neutral traps. It can be concluded that the nature of the neutral traps is associated with radiation-stimulated local reconstruction of Si-O valence bonds.
- Добавил в систему: Козлов Сергей Николаевич