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Effect of avalanche electron injection in the Si-SiO2 system on recombination of nonequilibrium charge carriersстатья
Информация о цитировании статьи получена из
Scopus,
Web of Science
Дата последнего поиска статьи во внешних источниках: 20 января 2016 г.
- Авторы: Kozlov S.N., Potapov A.Yu
- Журнал: Soviet Microelectronics
- Том: 17
- Номер: 5
- Год издания: 1989
- Первая страница: 262
- Последняя страница: 266
- Аннотация: A new avalanche injection method is proposed for studying the recombination of nonequilibrium electron-hole pairs in a semiconductor, and surface recombination in the system Si-SiO2 is studied with its help. A gate was deposited on the SiO2 surface by the method of thermal evaporation of aluminum in a vacuum. Avalanche injection of electrons appeared when a sequence of square positive voltage pulses was applied to the gate. The dc component of the electron avalanche injection current was measured at room temperature. Based on the results it can be asserted that in the process of avalanche injection recombination-active donor-like defects with sharply differing capture cross sections for electrons and holes are generated near the center of the band gap in silicon. The method enables separating the surface component of the recombination process and obtaining information about the dependence of the rate of surface recombination on the surface potential.
- Добавил в систему: Козлов Сергей Николаевич