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Effect of ammonia adsorption on charge carriers in mesoporous silicon of n- and p-type conductivityстатья
Информация о цитировании статьи получена из
Web of Science,
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 19 июля 2013 г.
- Авторы: Pavlikov A.V., Osminkina L.A., Vorontsov A.S., Timoshenko V.Yu, Kashkarov P.K.
- Журнал: Physica Status Solidi (C) Current Topics in Solid State Physics
- Том: 4
- Номер: 6
- Год издания: 2007
- Первая страница: 2126
- Последняя страница: 2130
- DOI: 10.1002/pssc.200674396
- Аннотация: Infrared spectroscopy is used to investigate the effect of ammonia adsorption on the concentration of equilibrium charge carriers in porous-silicon layers with various initial types of dopants at different concentrations. It is found that ammonia adsorption from aqueous solution results in an increase in the concentration of free electrons in n -type samples up to a level exceeding 1018 cm–3. In p -type samples, a nonmonotonic dependence of the charge-carrier concentration on ammonia pressure is observed. The obtained results are explained by the appearance of adsorption-induced shallow donor states that, along with the initial-dopant and surface-defect states, determine the charge-carrier type and concentration in the silicon nanocrystals of the porous layer after ammonia adsorption.
- Добавил в систему: Осминкина Любовь Андреевна