Oscillatoric bias dependence of DC-electric field induced second harmonic generation from SiSiO2 multiple quantum wellsстатья
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Аннотация:Electronic properties and morphology of the multiple Si-SiO2 quantum wells (MQWs), deposited on top of vicinal Si(001) substrate are studied by DC-electric field induced second harmonic generation (SHG). Non-linear contribution is associated with offset structure of the silicon layers of MQWs. Regular oscillations of the SHG intensity in the DC-electric field domain are observed. This oscillatoric SHG dependence stems from the non-monotonic dependence of the DC-electric field on the external bias voltage applied to the multilayer structure. The mechanism behind this phenomenon is essentially related to quantum confinement effects in 2D silicon layers. (C) 1998 Elsevier Science S.A. All rights reserved.