Correlation between spin density and photoluminescence intensity in thermally oxidized porous siliconстатья
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Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
Аннотация:We have investigated the optoelectronic properties of thermally oxidized meso ‐PS layers. The correlation between photoluminescence (PL) intensity in the visible spectral ranges and defect density detected by electron spin resonance method has been established. The observed PL is explained by the radiative recombination of excitons trapped on the electronic states (Si=O bonds) in Si nanocrystals. The thermal treatment of meso ‐PS results in both the oxidation and coalescence of Si nanocrystals. Then, the simultaneous increase of both Si=O bond concentration and the density of Pb‐like centers at Si/SiO2 interfaces takes place.