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IR and EPR study of ammonia adsorption effect on silicon nanocrystalsстатья
Информация о цитировании статьи получена из
Web of Science,
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
- Авторы: Konstantinova E., Pavlikov A., Vorontsov A., Efimova A., Timoshenko V., Kashkarov P.
- Журнал: Physica Status Solidi (A) Applications and Materials Science
- Том: 206
- Номер: 6
- Год издания: 2009
- Издательство: Wiley - V C H Verlag GmbbH & Co.
- Местоположение издательства: Germany
- Первая страница: 1330
- Последняя страница: 1332
- DOI: 10.1002/pssa.200881091
- Аннотация: IR and EPR spectroscopy is used to investigate the effect of adsorption of dry and wet ammonia on the concentration of equilibrium charge carriers in porous silicon layers with various initial types of dopants. It is found by means of IR spectroscopy that only in the presence of water molecules the ammonia adsorption results in an increase in the concentration of free charge carriers in n-type samples up to a level exceeding 10 18 cm -3. In p-type samples, a nonmonotonic dependence of the charge-carrier concentration on ammonia pressure is observed. By means of EPR spectroscopy in the atmosphere of wet ammonia the generation of conductionband electrons in p-type silicon nanocrystals and the increase in the electron concentration in n-type silicon nanocrystals in comparison with the initial level are observed.
- Добавил в систему: Павликов Александр Владимирович