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Si/SiGe: Er/Si structures for laser realization: Theoretical analysis and luminescent studiesстатья
Информация о цитировании статьи получена из
Web of Science,
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 9 ноября 2017 г.
- Авторы: Stepikhova M.V., Krasil'nikova L.V., Krasil'nik Z.F., Shengurov V.G., Chalkov V.Y., Svetlov S.P., Zhigunov D.M., Timoshenko V.Y., Kashkarov P.K.
- Журнал: Journal of Crystal Growth
- Том: 288
- Номер: 1
- Год издания: 2006
- Издательство: Elsevier BV
- Местоположение издательства: Netherlands
- Первая страница: 65
- Последняя страница: 69
- DOI: 10.1016/j.jcrysgro.2005.12.056
- Аннотация: In this work we present the results of theoretical calculations and experimental studies carried out for Si/Si(1-X)AGe(X): Er/Si heterostructures that show promise as the material for realizing a laser with Si: Er active medium. Analysis of the mode composition and estimation of the degree of electromagnetic wave localization in Si/Si1-XGeX: Er/Si waveguide structures have been performed for a fairly wide range of values of the Si1-XGeX: Er layer thickness and Ge content. It is shown that a method of sublimation molecular-beam epitaxy in germane gas atmosphere enables growing effective light-emitting structures of Si/Si1-XGeX: Er/Si with the external quantum efficiency to 0.2%. The kinetics analysis of erbium photoluminescence, performed for the test structures, demonstrates the appearance of the population inversion of Er3+ ion states under optical pumping. The number of Er ions in the inversely populated state comes to about 80% from the total concentration of optically active Er ions at the excitation power density of 4 W/cm(2). (c) 2005 Elsevier B.V. All rights reserved.
- Добавил в систему: Тимошенко Виктор Юрьевич