Effect of the initial doping level on changes in the free-carrier concentration in porous silicon during ammonia adsorptionстатья
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Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
Аннотация:Infrared spectroscopy is used to investigate the effect of ammonia adsorption on the concentration of equilibrium charge carriers in porous-silicon layers with various initial types of dopants at different concentrations. It is found that ammonia adsorption results in an increase in the number of free electrons in n-type samples up to a level exceeding 10(18) cm(-3). In p-type samples, a nonmonotonic dependence of the charge-carrier concentration on ammonia pressure is observed. The obtained results are accounted for by the appearance of adsorption-induced shallow donor states that, along with the initial-dopant and surface-defect states, specify the charge-carrier type and concentration in the silicon nanocrystals of the porous layer after ammonia adsorption. (c) 2005 Pleiades Publishing, Inc.