Temperature dependence of the photoluminescence of porous siliconстатья
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Аннотация:The photoluminescence of porous silicon in the temperature range from 300 to 400 K is investigated. It is shown that the experimental results are explained well on the basis of a model of the radiative recombination of excitons in silicon nanostructures. According to numerical estimates obtained by comparing the experimental and calculated curves, the exciton binding energy is 0.2 eV. (C) 1997 American Institute of Physics.