Laser-induced melting and defect formation in cadmium tellurideстатья
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Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
Местоположение издательства:[Bristol, UK], England
Первая страница:925
Последняя страница:927
Аннотация:The modification of structural, electrical and recombinational properties of CdTe under nanosecond ruby laser pulse action has been investigated using second-harmonic generation, photoreflectance, and photoluminescence techniques. The pulse energy density, W-m, necessary for a melting of CdTe surface was found to be equal to 40 +/- 5 mJ/cm(2). Laser-induced defect formation after the irradiation at W greater than or equal to W-m was registered. In addition to defect creation, a competing process of defect annihilation was observed in the narrow interval of W just above the melting threshold.