Silicon nanowire field effect transistor made of silicon-on-insulatorстатья
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Дата последнего поиска статьи во внешних источниках: 4 февраля 2014 г.
Авторы:
Presnov D.E. ,
Amitonov S.V. ,
Krupenin V.A.
Журнал:
Russian Microelectronics
Том:
41
Номер:
5
Год издания:
2012
Издательство:
Maik Nauka/Interperiodica Publishing
Местоположение издательства:
Russian Federation
Первая страница:
310
Последняя страница:
313
DOI:
10.1134/S1063739712050034
Аннотация:
In this study, a fabrication technique and the results of the investigation of a silicon nanowire-based field effect transistor (Si NWFET) that can be the backbone for the fabrication of a high-sensitivity field and charge sensor with nanoscale spatial resolution for uses in different branches of physics, biology and medicine, are presented. The NWFET was fabricated of silicon-on-insulator (SOI) material by electron-beam lithography and reactive ion etching. Special care was taken of the electrical insulation of lead-in (metal) contact wires to the drain and source of the transistor, both for a reduction in the current of the leak-age to the underlying silicon wafer and for preventing contact with a conducting medium during experiments in a liquid. The measurements of the transistor in wet solutions of various pH demonstrate the possibility of using such a SiNWFET as an ultrasensitive field/charging sensor.
Original Russian Text © D.E. Presnov, S.V. Amitonov, V.A. Krupenin, 2012, published in Mikroelektronika, 2012, Vol. 41, No. 5, pp. 364–367.
Добавил в систему:
Преснов Денис Евгеньевич