Infrared Diagnostics of free Charge Carriers in Silicon Nanowiresстатья
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Дата последнего поиска статьи во внешних источниках: 1 августа 2019 г.
Аннотация:Free charge carrier concentration in arrays of silicon nanowires (SiNWs) with cross-sectional size of the order of 100 nm was quantitatively studied by means of the infrared spectroscopy in an attenuated total reflection mode. SiNWs were formed on lightly-doped p-type crystalline silicon substrates by metal-assisted chemical etching followed by additional doping through thermoactivated diffusion of boron at 900 – 1000 °C. The latter process was found to increas the concentration of free holes in SiNWs up to (1–3)×1019 cm-3. Potential applications of highly doped SiNWs in thermoelectric energy converters and infrared plasmonic devices are discussed.