Photoemf and photoinduced trapping of a charge in porous siliconстатья
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Дата последнего поиска статьи во внешних источниках: 29 мая 2015 г.
Аннотация:The spectral and kinetic dependences of photovoltaic effects in porous silicon-crystal substrate structures were studied. Freshly prepared samples and samples which were specially aged in air were investigated. In addition to the photoemf component, which is associated with the depletion region in the silicon substrate at the boundary with the porous layer, a photoemf formed in the porous silicon was observed for the first time. It was determined that electronic states with recharging times of the order of several minutes are present on the surface of the voids. The properties of these states depend on the thermovacuum treatments of the structures. Ultraslow hole traps with relaxation times of several hours were recorded in the aged samples. These traps are localized in the oxide on the surface of the silicon framework of the porous layer. An energy diagram, which explains the appearance of photovoltaic effects in the experimental structures, was constructed on the basis of the data obtained. (C) 1995 American Institute of Physics.