Metal-insulator transition in chromium-doped Pb1-xGexTe alloysстатья
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Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
Аннотация:The electrical properties of chromium-doped n-Pb1−x Ge x Te alloys (x = 0.02–0.13) have been studied. A decrease in the free-electron concentration and a metal-insulator transition are observed as the germanium content of alloys increases. This is due to the Fermi level pinning by the chromium impurity level and to the flow of electrons from the conduction band to the impurity level. The experimental data obtained are used to calculate, in terms of the two-band Kane dispersion law, the dependences of the electron concentration and Fermi energy on the germanium content in the alloy. The motion rate of the chromium-related level with respect to the conduction band bottom is determined and a model of variation of the electronic structure with the matrix composition is suggested.