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High pressure spectroscopy of deep irradiation-induced states in IV-VI semiconductors (Review)статья
Информация о цитировании статьи получена из
Web of Science
Дата последнего поиска статьи во внешних источниках: 29 мая 2015 г.
- Авторы: Brandt N.B., Skipetrov E.P.
- Журнал: Fizika Nizkikh Temperatur
- Том: 22
- Номер: 8
- Год издания: 1996
- Первая страница: 870
- Последняя страница: 891
- Аннотация: The results are given of the experimental investigation into the energy spectra of irradiation-induced defects in the electron-irradiated semiconductors based on IV-VI semiconductors (Pb1-xSnxSe, Pb1-xSnxTe), obtained by a high pressure spectroscopy of localized states. Main attention is paid experimental revealing or the irradiation-induced states, interpretation of effects connected with a redistribution of electrons in irradiated crystals between allowed bands and irradiation-induced states under pressure, construction of the models of reconstruction of the energy spectra of irradiated alloys when changing the tin content and under pressure. Re construction of the function of the density of states ill the resonant irradiation-induced bands and determination of the main parameters of the energy spectra of irradiated Pb1-xSnxSe, Pb1-xSnxTe alloys are discussed.
- Добавил в систему: Скипетров Евгений Павлович
Прикрепленные файлы
| № | Имя | Описание | Имя файла | Размер | Добавлен |
|---|---|---|---|---|---|
| 1. | Полный текст | Физика низких температур | FNT9608.pdf | 1,7 МБ | 19 апреля 2015 [epskip] |