Application of the high-pressure thermoelectric technique for characterization of semiconductor microsamples: PbX-based compounds

Ovsyannikov, S.V.; Shchennikov, V.V.; Ponosov, Y.S.; Gudina, S.V.; Guk, V.G.; Skipetrov, E.P.; Mogilenskikh, V.E.

Авторы: Ovsyannikov S.V., Shchennikov V.V., Ponosov Y.S., Gudina S.V., Guk V.G., Skipetrov E.P., Mogilenskikh V.E.
Журнал: Journal of Physics D - Applied Physics
Том: 37
Номер: 8
Год издания: 2004
Издательство: IOP Publishing
Местоположение издательства: [Bristol, UK], England
Первая страница: 1151
Последняя страница: 1157
DOI: 10.1088/0022-3727/37/8/002
Аннотация: In this paper the technique of thermoelectric measurements at high pressure was applied for characterization of semiconductor microsamples based on lead chalcogenide compounds (p-PbSe, n-Pb1-X Sn-x Se). The Raman scattering technique at ambient pressure was used as an alternative tool for testing of the samples. Raman measurements have revealed broad peaks at 135 and 265 cm(-1) for PbSe and Pb1-x SnxSe. Analogous spectra were obtained for PbS, and PbTe-based ternary compounds at higher and lower frequencies, respectively. The peaks have been attributed to the first- and second-order Raman modes. From resistivity and thermoelectric power data the linear decrease in the pressure of the NaCl --> GeS structural phase transition with increasing Sri content has been established and the thermopower of high-pressure GeS phases have been determined. Thermoelectric properties of the samples at high pressure have shown high sensitivity to a small variation in the composition of the ternary Pb1-xSnxSe compounds, which makes it possible to distinguish semiconductor microsamples whose compositions are very similar.
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Application of the high-pressure thermoelectric technique for characterization of semiconductor microsamples: PbX-based compoundsстатья