High-pressure spectroscopy of deep states induced by electron irradiation in A4B6 semiconductors: (A Review)

Авторы: Brandt N.B., Skipetrov E.P.
Журнал: Low Temperature Physics
Том: 22
Номер: 8
Год издания: 1996
Издательство: AIP Publishing
Местоположение издательства: United States
Первая страница: 665
Последняя страница: 682
DOI: 10.1063/1.593226
Аннотация: We present the results of experimental investigations of the energy spectrum of radiation‐induced defects in electron‐irradiated semiconductors based on A4B6 semiconductors Pb1−xSnxSe and Pb1−xSnxTe, obtained by using the high‐pressure spectroscopy of localized states. The main attention is paid to the experimental detection of states induced by irradiation, interpretation of qualitative effects associated with redistribution of electrons in irradiated crystals between allowed bands and radiation‐induced states under pressure, construction and substantiation of models describing the reconstruction of the energy spectra of irradiated alloys by changing the tin concentration and pressure. Reconstruction of the density of states function in the resonant radiation‐induced bands is discussed and the main parameters of the models of energy spectrum of electron‐irradiated Pb1−xSnxSe and Pb1−xSnxTe are investigated.
Добавил в систему: Скипетров Евгений Павлович

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