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Распыление полупроводников ионами высоких энергийстатья
- Авторы: Мерзук Б., Миннебаев Д.К., Шемухин А.А., Балакшин Ю.В.
- Журнал: Ученые записки физического факультета Московского Университета
- Номер: 2
- Год издания: 2019
- Первая страница: 1920404–1
- Последняя страница: 1920404–4
- Аннотация: This article discusses the phenomenon of sputtering: its application, history and properties. An integral part of which is thebasic Zygmund’s theory, which is currently considered to be the main one in the field of ssputtering, since it takes into accountthe greatest number of nuances of ion sputtering. It states that the coefficient of ion sputtering Y is proportional to the cosine ofthe sputtering angle theta in the n degree, which depends on mass and charge. That is, theoretically, it should increase with anincrease in the energy of the incident particles. When checking this statement at energies of the order of 10 keV, the theory wasperformed, however, experiments conducted at higher energies (80, 200, 250 and 300 keV) demonstrated that this is not the case,and in the range of 200 - 250 keV there is a significant dip in the value of coefficient.
- Добавил в систему: Миннебаев Дамир Кашифович