Effect of porosity and pore size on dielectric constant of organosilicate based low-k films: An analytical approach

Palov, A.P.; Voronina, E.N.; Rakhimova, T.V.; Lopaev, D.V.; Zyryanov, S.M.; Mankelevich, Y.A.; Krishtab, M.B.; Baklanov, M.R.

Информация о цитировании статьи получена из Web of Science, Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 28 ноября 2017 г.

Авторы: Palov A.P., Voronina E.N., Rakhimova T.V., Lopaev D.V., Zyryanov S.M., Mankelevich Yu A., Krishtab M.B., Baklanov M.R.
Журнал: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Том: 34
Номер: 4
Год издания: 2016
Издательство: AIP Publishing
Местоположение издательства: United States
Первая страница: 041205
DOI: 10.1116/1.4946838
Аннотация: An analytical approach allowing to analyze effect of porosity, pore size, and interconnectivity on dielectric constant of organosilicate based low-k materials is developed. Within the framework of this approach, a good agreement between the calculated and experimentally measured dielectric constants for several porogen (template) based organosilicate glasses low-k films is demonstrated. It is shown that the best agreement between the calculated and measured k-values corresponds to low-k structure with CH3 groups localized on pore wall surface. The results also demonstrate a good agreement with recently published results of similar analysis based on numerical approach.
Добавил в систему: Палов Александр Петрович

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Effect of porosity and pore size on dielectric constant of organosilicate based low-k films: An analytical approachстатья

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