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Insulator-metal transition in diluted magnetic semiconductor Pb1-x-ySn xVyTe under pressureстатья
Информация о цитировании статьи получена из
Web of Science,
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 19 июля 2013 г.
- Авторы: Skipetrov E.P., Golovanov A.N., Kovalev B.B., Skipetrova L.A., Mousalitin A.M., Slyn’ko E.I., Slyn’ko V.E.
- Журнал: Solid State Phenomena
- Том: 190
- Номер: 6
- Год издания: 2012
- Первая страница: 566
- Последняя страница: 569
- DOI: 10.4028/www.scientific.net/SSP.190.566
- Аннотация: The galvanomagnetic properties in weak magnetic fields (4.2T300 K, B0.07 T) as well as Shubnikov-de Haas effect (T=4.2 K, B7 T) in the single crystal Pb1-x-ySnxVyTe (x=0.20, y0.01) under hydrostatic compression up to 15 kbar have been investigated. It is shown that under pressure the decrease of activation energy of vanadium deep level, n-p-inversion of the conductivity type at low temperatures and insulator-metal transition take place. In the metallic phase sharp increase of the Hall mobility and appearance of Shubnikov-de Haas oscillations at helium temperature are observed. The pressure coefficient of vanadium level energy is determined and the diagram of the electronic structure rearrangement for Pb1-x-ySnxVyTe under pressure is proposed.
- Добавил в систему: Скипетров Евгений Павлович