Epitaxial stabilization - A tool for synthesis of new thin film oxide materialsстатья
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Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
Авторы:
Kaul A.a. ,
Gorbenko O.a. ,
Novojilov M.b. ,
Kamenev A.b. ,
Bosak A.b. ,
Mikhaylov A.a. ,
Boytsova O.b. ,
Kartavtseva M.b.
Журнал:
Journal of Crystal Growth
Том:
275
Номер:
1-2
Год издания:
2005
Издательство:
Elsevier BV
Местоположение издательства:
Netherlands
Первая страница:
2445
DOI:
10.1016/j.jcrysgro.2004.11.358
Аннотация:
In the paper, it is seen that many oxides can be obtained as thin epitaxial films in spite of the thermodynamic instability of corresponding bulk materials at the film deposition conditions. This synthetic approach, named epitaxial stabilization (ES), is based on free-energy gain due to structural coherence at the film/substrate interface and can be effectively used to enlarge the spectrum of new functional materials. A thermodynamic model of ES was developed and its validity was confirmed by the author’s results on the stabilization of numerous rare earth compounds with garnet, perovskite and hexagonal structures in the form of epitaxial films obtained by metal-organic chemical vapor deposition (MOCVD) technique. The use of ES for selective epitaxy in the preparation of the planar structures is demonstrated. © 2004 Elsevier B.V. All rights reserved.
Добавил в систему:
Бойцова Ольга Владимировна