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Disorder and its effect on the electron tunneling and hopping transport in semiconductor superlatticesстатья
Информация о цитировании статьи получена из
Web of Science,
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
- Авторы: Pupysheva O.V., Dmitriev A.V.
- Журнал: Physica E: Low-Dimensional Systems and Nanostructures
- Том: 18
- Номер: 1-3
- Год издания: 2003
- Издательство: Elsevier BV
- Местоположение издательства: Netherlands
- Первая страница: 290
- Последняя страница: 291
- DOI: 10.1016/S1386-9477(02)01022-6
- Аннотация: In this work, we study theoretically vertical electron transport in semiconductor superlattices subject to an electric field. A disorder is introduced into the layer parameters. Both, disordered superlattices with a strong electron scattering and those with a weak scattering, are considered at low temperatures. The interwell hopping transport is simulated for the former structures, and the tunneling approach is adopted for the latter superlattices. In both models the current-voltage characteristics are calculated for various types and degrees of the disorder. The superlattice transport properties can be controlled by the disorder. (C) 2003 Elsevier Science B.V. All rights reserved.
- Добавил в систему: Дмитриев Алексей Владимирович