Interband radiative recombination calculations in ternary nitride solid solutions

Авторы: Dmitriev A.V., Oruzheinikov A.L.
Журнал: Materials Research Society Symposium Proceedings
Том: 482
Год издания: 1997
Первая страница: 851
Последняя страница: 855
DOI: 10.1557/PROC-482-851
Аннотация: We calculated for the first time the interband radiative recombination rate R in the wide-gap semiconductors GaN, InN and AlN crystallizing in the hexagonal wurtzite structure, and in ternary In xG yAl 1-x-yN alloys including also binary solid solutions Ga xAl 1-xN, In xAl 1-xN and Ga xIn 1-xN. All our calculations were based on experimental data on energy band structures and optical absorption spectra of the nitride materials. The radiative recombination coefficient B defined according to the equation R = B np, n and p being the carrier densities, is higher in InN and lower in GaN, taking intermediate values in AlN. For example, B = (2.7, 0.4 and 0.15)×10 -10 cm 3 for InN, AlN and GaN, correspondingly. The carrier lifetime in GaN equals 60 ns at 300 K and n = 1×10 17 cm -3. The radiative recombination coefficient increases with the concentration of indium nitride in the ternary alloys.
Добавил в систему: Дмитриев Алексей Владимирович

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