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Influence of solvent electron affinity on paramagnetic defects in hybrid Si/SiOx luminescent nanoparticlesстатья
Информация о цитировании статьи получена из
Web of Science,
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 17 июля 2019 г.
- Авторы: Gromov Oleg I., Feklichev Evgeny D., Zhidomirov Georgy M., Rybaltovskii Alexey O., Sviridov Alexander P., Grigoriev Yuriy V., Ischenko Anatoly A., Bagratashvili Victor N., Golubeva Elena N.
- Журнал: Journal of Nanoparticle Research
- Том: 21
- Номер: 6
- Год издания: 2019
- Издательство: Springer Nature
- Местоположение издательства: Switzerland
- Первая страница: 127
- DOI: 10.1007/s11051-019-4575-5
- Аннотация: Luminescence of 1-octadecene-coated silicon nanoparticles with 8 nm crystalline core in hexane and CCl4 colloidal solutions and its reversible photobleaching were examined. In agreement with previous reports, anti-correlation of luminescence intensity and the number of paramagnetic defects were found in hexane. Luminescence intensity is decreased by 75% during 30 min of 405 nm laser irradiation while the number of paramagnetic defects is increased by 65%. Paramagnetic defects were supposed to be silicon dangling bonds. In CCl4 colloidal solution, this correlation is lost: photobleaching is similar to hexane colloidal solution, while the number of paramagnetic defects is not changed during irradiation. Electron trapping and subsequent breaking of weak Si-Si bonds are proposed to be the reason of formation of silicon dangling bonds during irradiation. DFT calculation of geometry and g-tensor of Si-vacancy on the boundary of crystalline silicon core and oxide shell was performed. Formation of paramagnetic defects is supposed to be a by-process responsible only for a minor effect on luminescence intensity.
- Добавил в систему: Громов Олег Игоревич