Influence of the Charge State of Xenon Ions on the Depth Distribution Profile Upon Implantation into Silicon

Balakshin, Y.V.; Kozhemiako, A.V.; Petrovic, S.; Erich, M.; Shemukhin, A.A.; Chernysh, V.S.

Авторы: Balakshin Yu V., Kozhemiako A.V., Petrovic S., Erich M., Shemukhin A.A., Chernysh V.S.
Журнал: Semiconductors
Том: 53
Номер: 8
Год издания: 2019
Издательство: Springer
Местоположение издательства: New York
Первая страница: 1011
Последняя страница: 1017
Оригинальные версии: Влияние зарядового состояния ионов ксенона на профиль распределения по глубине при имплантации в кремний
DOI: 10.1134/S1063782619080062
Аннотация: Experimental depth distributions of the concentration of implanted xenon ions depending on their charge state and irradiation energy are presented. Xenon ions in charge states q = 1–20 and energies in the range from 50 to 400 keV are incorporated into single-crystal silicon. Irradiation is performed in the direction not coinciding with the crystallographic axes of the crystal to avoid the channeling effect. The ion fluence varies in the range of 5 × (1014–1015) ion/cm2. The irradiation by singly charged ions and investigation of the samples by Rutherford backscattering spectroscopy is performed using an HVEE acceleration complex at Moscow State University. Multiply charged ions are implanted using a FAMA acceleration complex at the Vinća Institute of Nuclear Sciences. The depth distribution profiles of the incorporated ions are found using Rutherford backscattering spectroscopy. Experimental results are correlated with computer calculations. It is shown that the average projective path of multiply charged ions in most cases is shorter when compared with the average projected path of singly charged ions and the results of computer modeling.
Добавил в систему: Балакшин Юрий Викторович

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Influence of the Charge State of Xenon Ions on the Depth Distribution Profile Upon Implantation into Siliconстатья Исследовательская статья

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