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High-frequency characteristics of bipolar heterotransistors under conditions of coservative transport of hot electrons in the baseстатья
Информация о цитировании статьи получена из
Scopus,
Web of Science
Дата последнего поиска статьи во внешних источниках: 11 мая 2021 г.
- Авторы: Zakharova A.A., Ryzhii V.I.
- Журнал: Soviet Microelectronics
- Том: 14
- Номер: 6
- Год издания: 1985
- Первая страница: 269
- Последняя страница: 272
- Аннотация: The high-frequency (hf) properties of bipolar heterotransistors (BHT), which are among the most promising elements in digital microwave integrated circuits, depend substantially on the nature of the transport of the injected carriers in the base and the collector junction. BHT, functioning under conditions ensuring strong nonequilibrium of minority carriers, are of special interest. The purpose of this work is to calculate the frequency dependences of the effectiveness of electron transport through a nonuniform variable-gap base, in which the quasielectric field can give rise to strong heating of the electrons.
- Добавил в систему: Захарова Анна Александровна