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Cellular-automata model of oxygen plasma impact on porous low-K dielectricстатья
- Авторы: Rezvanov Askar, Matyushkin Igor V., Gutshin Oleg P., Gornev Evgeny S.
- Сборник: Proc. SPIE 10224, International Conference on Micro- and Nano-Electronics 2016
- Том: 10224
- Год издания: 2016
- DOI: 10.1117/12.2266626
- Аннотация: Cellular-automata model of oxygen plasma influence on the integral properties of porous low-K dielectric is studied. The present work investigates the imitative simulation of this process. In our model we consider one isolated pore, which is simulated by cylinder with length L=200 nm and radius 1 nm ignoring the curvature factor. The simulation was performed for 2 million automata steps that correspond to 2 seconds in the real process time. Extrapolating the data to the longer time shows that more and more •CH3 groups will be replaced by the •OH groups, and over time almost all methyl groups will leave the pore surface (there is not more than 20% of the initial methyl groups amount on the first low-K dielectric 40nm after 2 seconds simulation).
- Добавил в систему: Резванов Аскар Анварович