Analysis of the charge transfer mechanisms responsible for the current-voltage characteristics of Ca4Ga2S7: Eu3+ single crystalsстатья
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Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
Местоположение издательства:Road Town, United Kingdom
Первая страница:426
Последняя страница:432
Аннотация:The current-voltage characteristics of Ca4Ga2S7 : Eu3+ single crystals are measured for the first time, and the processes affecting these characteristics are analyzed theoretically. It is demonstrated that Ca4Ga2S7 : Eu3+ single crystals are high-resistance semiconductors with a resistivity of similar to10(9) Omega cm and a relative permittivity of 10.55. The electrical properties of the studied materials are governed by traps with activation energies of 0.13 and 0.19 eV and a density ranging from 9.5 x 10(14) to 2.7 x 10(15) cm(-3). The one-carrier injection is observed in weak electric fields. In electric fields with a strength of more than 4 x 10(3) V/cm, traps undergo thermal field ionization according to the Pool-Frenkel mechanism. At low temperatures and strong fields (160 K and 5 x 10(4) V/cm), the electric current is most likely due to hopping conduction by charge carriers over local levels in the band gap in the vicinity of the Fermi level. (C) 2003 MAIK "Nauka/Interperiodica".