Effects of dissipative electron tunneling manifested in the photocurrent of a GaAs p-i-n photodiode with a double InAs quantum dot layer

Krevchik, V.D.; Semenov, M.B.; Shorokhov, A.V.; Filatov, D.O.; Baidus, N.V.; Marychev, M.O.; Shkurinov, A.P.; Timoshenko, V.Y.; Krevchik, P.V.; Zhurina, A.E.; Saburova, D.A.; Antonov, I.S.; Semenov, I.M.

Авторы: Krevchik V.D., Semenov M.B., Shorokhov A.V., Filatov D.O., Baidus N.V., Marychev M.O., Shkurinov A.P., Timoshenko V.Yu, Krevchik P.V., Zhurina A.E., Saburova D.A., Antonov I.S., Semenov I.M.
Журнал: Journal of Physics: Conference Series
Том: 1851
Номер: 1
Год издания: 2021
Издательство: IOP Publishing
Местоположение издательства: [Bristol, UK], England
Первая страница: 012016
Последняя страница: 012016
DOI: 10.1088/1742-6596/1851/1/012016
Аннотация: We report on the results of experimental studies of the photocurrent (PC) ofphotodiodes based on GaAs p-i-n structures with InAs/GaAs(001) double asymmetric quantumdot (DAQD) arrays obtained by self-assembling in the process of low-pressure metal-organicvapor phase epitaxy (LP-MOVPE). Three peaks were observed in the dependence of the PC onthe reverse bias, measured under photoexcitation with a photon energy equal to the energy ofthe interband ground state transition in larger InAs QDs. These peaks were attributed tophotoexcitation of electrons from the ground hole states in larger QDs into the ground electronstates followed by resonant dissipative (with absorption or emission of optical phonons) andconservative tunneling into the GaAs conduction band via the ground electron states in smallerQDs. The PC dependence on the bias voltage agrees qualitatively with the theoretical fielddependence of the probability of 1D dissipative tunneling between the QDs.1. IntroductionAn experimental observation of the theoretically predicted macroscopic effects of dissipative
Добавил в систему: Шкуринов Александр Павлович

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Effects of dissipative electron tunneling manifested in the photocurrent of a GaAs p-i-n photodiode with a double InAs quantum dot layerстатья

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